Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range
In this letter, we study the optical properties of GaN1�xSbx thin films. Films with an Sb fraction up to 42% were synthesized by alternating GaN-GaSb layers at a constant temperature of 325 �C. The measured optical absorption data of the films are interpreted using a modified band anticrossing model...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
American Institute of Physics
2015
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| Online Access: | http://eprints.nottingham.ac.uk/34755/ http://eprints.nottingham.ac.uk/34755/ http://eprints.nottingham.ac.uk/34755/ http://eprints.nottingham.ac.uk/34755/1/APL107_2015_142104.pdf |