Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation

In this work, a biaxial stress modulation method, combining the microfabrication technique, finite element analysis and a weighted averaging process, was developed to study piezospectroscopic behavior of hexagonal GaN films, epitaxially grown by metalorganic chemical vapor deposition on c-sapphire a...

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Main Authors:	Jun-Yong Lu, Dong-Mei Deng, Yong Wang, Kevin Jing Chen, Kei-May Lau, Tong-Yi Zhang
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2011-09-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.3626532

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spelling	doaj-art-b905de405a294d669a114f33c7c0369f2018-09-02T15:54:56ZengAIP Publishing LLCAIP Advances2158-32262011-09-0113032132032132-510.1063/1.3626532032103ADVPhonon deformation potentials of hexagonal GaN studied by biaxial stress modulationJun-Yong Lu0Dong-Mei Deng1Yong Wang2Kevin Jing Chen3Kei-May Lau4Tong-Yi Zhang5Department of Mechanical Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, SAR, ChinaDepartment of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, SAR, ChinaDepartment of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, SAR, ChinaDepartment of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, SAR, ChinaDepartment of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, SAR, ChinaDepartment of Mechanical Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, SAR, ChinaIn this work, a biaxial stress modulation method, combining the microfabrication technique, finite element analysis and a weighted averaging process, was developed to study piezospectroscopic behavior of hexagonal GaN films, epitaxially grown by metalorganic chemical vapor deposition on c-sapphire and Si (111) substrates. Adjusting the size of patterned islands, various biaxial stress states could be obtained at the island centers, leading to abundant stress-Raman shift data. With the proposed stress modulation method, the Raman biaxial stress coefficients of E2H and A1 (LO) phonons of GaN were determined to be 3.43 cm-1/GPa and 2.34 cm-1/GPa, respectively.http://dx.doi.org/10.1063/1.3626532
institution	Open Data Bank
collection	Open Access Journals
building	Directory of Open Access Journals
language	English
format	Article
author	Jun-Yong Lu Dong-Mei Deng Yong Wang Kevin Jing Chen Kei-May Lau Tong-Yi Zhang
spellingShingle	Jun-Yong Lu Dong-Mei Deng Yong Wang Kevin Jing Chen Kei-May Lau Tong-Yi Zhang Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation AIP Advances
author_facet	Jun-Yong Lu Dong-Mei Deng Yong Wang Kevin Jing Chen Kei-May Lau Tong-Yi Zhang
author_sort	Jun-Yong Lu
title	Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation
title_short	Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation
title_full	Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation
title_fullStr	Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation
title_full_unstemmed	Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation
title_sort	phonon deformation potentials of hexagonal gan studied by biaxial stress modulation
publisher	AIP Publishing LLC
series	AIP Advances
issn	2158-3226
publishDate	2011-09-01
description	In this work, a biaxial stress modulation method, combining the microfabrication technique, finite element analysis and a weighted averaging process, was developed to study piezospectroscopic behavior of hexagonal GaN films, epitaxially grown by metalorganic chemical vapor deposition on c-sapphire and Si (111) substrates. Adjusting the size of patterned islands, various biaxial stress states could be obtained at the island centers, leading to abundant stress-Raman shift data. With the proposed stress modulation method, the Raman biaxial stress coefficients of E2H and A1 (LO) phonons of GaN were determined to be 3.43 cm-1/GPa and 2.34 cm-1/GPa, respectively.
url	http://dx.doi.org/10.1063/1.3626532
_version_	1612636024931876864

Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation

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