High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition

High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition

In this letter, high-resistivity unintentionally carbon-doped GaN layers with sheet resistivity greater than 106 Ω/□ have been grown on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). We have observed that the growth of GaN nucleation layers (NLs) under N2 ambient lea...

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Bibliographic Details
Main Authors: Fu Chen, Shichuang Sun, Xuguang Deng, Kai Fu, Guohao Yu, Liang Song, Ronghui Hao, Yaming Fan, Yong Cai, Baoshun Zhang
Format: Article
Language:English
Published: AIP Publishing LLC 2017-12-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4990099

Internet

http://dx.doi.org/10.1063/1.4990099

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