High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition

by Fu Chen, Shichuang Sun, Xuguang Deng, Kai Fu, Guohao Yu, Liang Song, Ronghui Hao, Yaming Fan, Yong Cai, Baoshun Zhang
Published 2017-12-01

Influence factors and temperature reliability of ohmic contact on AlGaN/GaN HEMTs

by Liang Song, Kai Fu, Jie Zhao, Guohao Yu, Ronghui Hao, Xiaodong Zhang, Fu Chen, Yaming Fan, Yong Cai, Baoshun Zhang
Published 2018-03-01

Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs

by Liang Song, Kai Fu, Zhili Zhang, Shichuang Sun, Weiyi Li, Guohao Yu, Ronghui Hao, Yaming Fan, Wenhua Shi, Yong Cai, Baoshun Zhang
Published 2017-12-01