Production, characterization and application of silicon-on-sapphire wafers

Silicon-on-sapphire (SOS) thin film systems have had specific electronic applications because they can reduce noise and current leakage in metal oxide semiconductor transistors. However, there are some issues in producing defect-free SOS wafers. Dislocations, misfit, micro twins and residual stresse...

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Bibliographic Details
Main Authors:	Pramanik, Alokesh, Zhang, L., Liu, M.
Format:	Journal Article
Published:	Trans Tech Publications 2010
Subjects:	residual stress thin film Silicon on sapphire defects
Online Access:	http://hdl.handle.net/20.500.11937/25303

id	curtin-20.500.11937-25303
recordtype	eprints
spelling	curtin-20.500.11937-253032017-09-13T15:53:33Z Production, characterization and application of silicon-on-sapphire wafers Pramanik, Alokesh Zhang, L. Liu, M. residual stress thin film Silicon on sapphire defects Silicon-on-sapphire (SOS) thin film systems have had specific electronic applications because they can reduce noise and current leakage in metal oxide semiconductor transistors. However, there are some issues in producing defect-free SOS wafers. Dislocations, misfit, micro twins and residual stresses can emerge during the SOS processing and they will reduce the performance of an SOS product. For some reasons, research publications on SOS in the literature are not extensive, and as a result, the information available in the public domain is fragmentary. This paper aims to review the subject matter in an as complete as possible manner based on the published information about the production, characterization and application of SOS wafers. 2010 Journal Article http://hdl.handle.net/20.500.11937/25303 10.4028/www.scientific.net/KEM.443.567 Trans Tech Publications restricted
repository_type	Digital Repository
institution_category	Local University
institution	Curtin University Malaysia
building	Curtin Institutional Repository
collection	Online Access
topic	residual stress thin film Silicon on sapphire defects
spellingShingle	residual stress thin film Silicon on sapphire defects Pramanik, Alokesh Zhang, L. Liu, M. Production, characterization and application of silicon-on-sapphire wafers
description	Silicon-on-sapphire (SOS) thin film systems have had specific electronic applications because they can reduce noise and current leakage in metal oxide semiconductor transistors. However, there are some issues in producing defect-free SOS wafers. Dislocations, misfit, micro twins and residual stresses can emerge during the SOS processing and they will reduce the performance of an SOS product. For some reasons, research publications on SOS in the literature are not extensive, and as a result, the information available in the public domain is fragmentary. This paper aims to review the subject matter in an as complete as possible manner based on the published information about the production, characterization and application of SOS wafers.
format	Journal Article
author	Pramanik, Alokesh Zhang, L. Liu, M.
author_facet	Pramanik, Alokesh Zhang, L. Liu, M.
author_sort	Pramanik, Alokesh
title	Production, characterization and application of silicon-on-sapphire wafers
title_short	Production, characterization and application of silicon-on-sapphire wafers
title_full	Production, characterization and application of silicon-on-sapphire wafers
title_fullStr	Production, characterization and application of silicon-on-sapphire wafers
title_full_unstemmed	Production, characterization and application of silicon-on-sapphire wafers
title_sort	production, characterization and application of silicon-on-sapphire wafers
publisher	Trans Tech Publications
publishDate	2010
url	http://hdl.handle.net/20.500.11937/25303
first_indexed	2018-09-06T20:52:22Z
last_indexed	2018-09-06T20:52:22Z
_version_	1610892855116562432

Production, characterization and application of silicon-on-sapphire wafers

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