Numerical solution of two dimensional time fractional-order biological population model

by Prakash Amit, Kumar Manoj
Published 2016-01-01

Pendulum Therapy of Molar Distalization in Mixed Dentition

by Patil, Raju Umaji, Prakash, Amit, Agarwal, Anshu
Published 2016

TaOx-based resistive switching memories: prospective and challenges

by Prakash, Amit, Jana, Debanjan, Maikap, Siddheswar
Published 2013

Time-dependent pH sensing phenomena using CdSe/ZnS quantum dots in EIS structure

by Kumar, Pankaj, Maikap, Siddheswar, Prakash, Amit, Tien, Ta-Chang
Published 2014

Self-compliance RRAM characteristics using a novel W/TaO x /TiN structure

by Maikap, Siddheswar, Jana, Debanjan, Dutta, Mrinmoy, Prakash, Amit
Published 2014

Self-compliance-improved resistive switching using Ir/TaOx/W cross-point memory

by Prakash, Amit, Jana, Debanjan, Samanta, Subhranu, Maikap, Siddheswar
Published 2013

Resistive switching memory characteristics of Ge/GeOx nanowires and evidence of oxygen ion migration

by Prakash, Amit, Maikap, Siddheswar, Rahaman, Sheikh Ziaur, Majumdar, Sandip, Manna, Santanu, Ray, Samit K
Published 2013

Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials

by Prakash, Amit, Maikap, Siddheswar, Banerjee, Writam, Jana, Debanjan, Lai, Chao-Sung
Published 2013

Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface

by Prakash, Amit, Maikap, Siddheswar, Chiu, Hsien-Chin, Tien, Ta-Chang, Lai, Chao-Sung
Published 2014

Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface

by Prakash, Amit, Maikap, Siddheswar, Chiu, Hsien-Chin, Tien, Ta-Chang, Lai, Chao-Sung
Published 2014

Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrOx/GdOx/W cross-point memories

by Jana, Debanjan, Maikap, Siddheswar, Prakash, Amit, Chen, Yi-Yan, Chiu, Hsien-Chin, Yang, Jer-Ren
Published 2014

Retraction: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface

by Prakash, Amit, Maikap, Siddheswar, Chiu, Hsien-Chin, Tien, Ta-Chang, Lai, Chao-Sung
Published 2013

Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte

by Rahaman, Sheikh Ziaur, Maikap, Siddheswar, Das, Atanu, Prakash, Amit, Wu, Ya Hsuan, Lai, Chao-Sung, Tien, Ta-Chang, Chen, Wei-Su, Lee, Heng-Yuan, Chen, Frederick T, Tsai, Ming-Jinn, Chang, Liann-Be
Published 2012