Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface
Enhanced resistive memory characteristics with 10,000 consecutive direct current switching cycles, long read pulse endurance of >105 cycles, and good data retention of >104 s with a good resistance ratio of >102 at 85°C are obtained using a Ti nanolayer to form a W/TiOx/TaOx/W structure und...
| Main Authors: | , , , , |
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| Format: | Online |
| Language: | English |
| Published: |
Springer
2014
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3999741/ |