TaOx-based resistive switching memories: prospective and challenges
Resistive switching memories (RRAMs) are attractive for replacement of conventional flash in the future. Although different switching materials have been reported; however, low-current operated devices (<100 μA) are necessary for productive RRAM applications. Therefore, TaOx is one of the prospec...
| Main Authors: | , , |
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| Format: | Online |
| Language: | English |
| Published: |
Springer
2013
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4124699/ |