SiC MOSFET device parameter spread and ruggedness of parallel multichip structures

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SiC MOSFET device parameter spread and ruggedness of parallel multichip structures

This paper presents a preliminary study of the impact of device electro-thermal parameter spread and temperature variation on the robustness of SiC MOSFET parallel multi-chip power switch architectures. Reference is made to 1200 V – 80 mΩ rated commercial devices. Some major parameters are identifie...

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Bibliographic Details
Main Authors:	Castellazzi, Alberto, Fayyaz, Asad, Kraus, Rainer
Format:	Article
Language:	English
Published:	Trans Tech Publications 2018
Online Access:	https://eprints.nottingham.ac.uk/54158/

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