SiC MOSFET device parameter spread and ruggedness of parallel multichip structures
This paper presents a preliminary study of the impact of device electro-thermal parameter spread and temperature variation on the robustness of SiC MOSFET parallel multi-chip power switch architectures. Reference is made to 1200 V – 80 mΩ rated commercial devices. Some major parameters are identifie...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Trans Tech Publications
2018
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| Online Access: | https://eprints.nottingham.ac.uk/54158/ |