Device loss model of a fully SiC based dual active bridge considering the effect of synchronous rectification and deadtime
It is becoming a great interest to employ SiC based power devices in dual active bridge (DAB) converter as an alternative to conventional Si-IGBT, due to its higher switching frequency potential, smaller switching losses as well as the capability to operate at synchronous rectification (SR) conditio...
| Main Authors: | , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2018
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| Online Access: | https://eprints.nottingham.ac.uk/53767/ |
| _version_ | 1848798987080957952 |
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| author | Wang, Zhenyu Castellazzi, Alberto |
| author_facet | Wang, Zhenyu Castellazzi, Alberto |
| author_sort | Wang, Zhenyu |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | It is becoming a great interest to employ SiC based power devices in dual active bridge (DAB) converter as an alternative to conventional Si-IGBT, due to its higher switching frequency potential, smaller switching losses as well as the capability to operate at synchronous rectification (SR) condition. This paper introduces the device loss model of a SiC MOSFET power module based DAB converter considering the effect of synchronous rectification, and the dead-time effect is also discussed. The calculated device loss for both SiC-MOSFET and Si-IGBT are discussed. The results show that the overall device loss is reduced by 40%, where the conduction loss is reduced by 38% because of SR capability of SiC-MOSFET, and the switching loss is reduced by 48% due to the faster transient of SiC-MOSFET during dead-time. On the other hand, the device losses are not even between the primary bridge and the secondary bridge of the DAB converter, and it is more significant for SiC-MOSFET based DAB due to the effect of SR with a maximum of 20%. At last, the dead-time range is given based on the device properties. |
| first_indexed | 2025-11-14T20:28:30Z |
| format | Conference or Workshop Item |
| id | nottingham-53767 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T20:28:30Z |
| publishDate | 2018 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-537672018-09-06T10:03:55Z https://eprints.nottingham.ac.uk/53767/ Device loss model of a fully SiC based dual active bridge considering the effect of synchronous rectification and deadtime Wang, Zhenyu Castellazzi, Alberto It is becoming a great interest to employ SiC based power devices in dual active bridge (DAB) converter as an alternative to conventional Si-IGBT, due to its higher switching frequency potential, smaller switching losses as well as the capability to operate at synchronous rectification (SR) condition. This paper introduces the device loss model of a SiC MOSFET power module based DAB converter considering the effect of synchronous rectification, and the dead-time effect is also discussed. The calculated device loss for both SiC-MOSFET and Si-IGBT are discussed. The results show that the overall device loss is reduced by 40%, where the conduction loss is reduced by 38% because of SR capability of SiC-MOSFET, and the switching loss is reduced by 48% due to the faster transient of SiC-MOSFET during dead-time. On the other hand, the device losses are not even between the primary bridge and the secondary bridge of the DAB converter, and it is more significant for SiC-MOSFET based DAB due to the effect of SR with a maximum of 20%. At last, the dead-time range is given based on the device properties. 2018-04-09 Conference or Workshop Item PeerReviewed application/pdf en https://eprints.nottingham.ac.uk/53767/1/Device%20loss%20model%20of%20a%20fully%20SiC%20based%20dual%20active%20bridge%20considering%20the%20effect%20of%20synchronous%20rectification%20and%20deadtime.pdf Wang, Zhenyu and Castellazzi, Alberto (2018) Device loss model of a fully SiC based dual active bridge considering the effect of synchronous rectification and deadtime. In: 2017 IEEE Southern Power Electronics Conference (SPEC), 4-7 December 2017, Puerto Varas, Chile. https://ieeexplore.ieee.org/document/8333662/ 10.1109/spec.2017.8333662 10.1109/spec.2017.8333662 10.1109/spec.2017.8333662 |
| spellingShingle | Wang, Zhenyu Castellazzi, Alberto Device loss model of a fully SiC based dual active bridge considering the effect of synchronous rectification and deadtime |
| title | Device loss model of a fully SiC based dual active bridge considering the effect of synchronous rectification and deadtime |
| title_full | Device loss model of a fully SiC based dual active bridge considering the effect of synchronous rectification and deadtime |
| title_fullStr | Device loss model of a fully SiC based dual active bridge considering the effect of synchronous rectification and deadtime |
| title_full_unstemmed | Device loss model of a fully SiC based dual active bridge considering the effect of synchronous rectification and deadtime |
| title_short | Device loss model of a fully SiC based dual active bridge considering the effect of synchronous rectification and deadtime |
| title_sort | device loss model of a fully sic based dual active bridge considering the effect of synchronous rectification and deadtime |
| url | https://eprints.nottingham.ac.uk/53767/ https://eprints.nottingham.ac.uk/53767/ https://eprints.nottingham.ac.uk/53767/ |