Device loss model of a fully SiC based dual active bridge considering the effect of synchronous rectification and deadtime
It is becoming a great interest to employ SiC based power devices in dual active bridge (DAB) converter as an alternative to conventional Si-IGBT, due to its higher switching frequency potential, smaller switching losses as well as the capability to operate at synchronous rectification (SR) conditio...
| Main Authors: | , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2018
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| Online Access: | https://eprints.nottingham.ac.uk/53767/ |