Characterisation and modeling of Gallium nitride power semiconductor devices dynamic on-state resistance

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Characterisation and modeling of Gallium nitride power semiconductor devices dynamic on-state resistance

Gallium nitride high-electron-mobility transistors (GaN-HEMTs) suffer from trapping effects that increases device on-state resistance (RDS(on)) above its theoretical value. This increase is a function of the applied dc bias when the device is in its off state, and the time which the device is biased...

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Bibliographic Details
Main Authors:	Li, Ke, Evans, Paul, Johnson, Christopher Mark
Format:	Article
Published:	IEEE 2018
Subjects:	Dynamic on-state resistance equivalent circuit gallium nitride high-electron-mobility transistors (GaN-HEMT) power semiconductor device characterisation power semiconductor device modeling.
Online Access:	https://eprints.nottingham.ac.uk/50572/

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