Characterisation and modeling of Gallium nitride power semiconductor devices dynamic on-state resistance
Gallium nitride high-electron-mobility transistors (GaN-HEMTs) suffer from trapping effects that increases device on-state resistance (RDS(on)) above its theoretical value. This increase is a function of the applied dc bias when the device is in its off state, and the time which the device is biased...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Published: |
IEEE
2018
|
| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/50572/ |