Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source

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Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source

Recent developments with group III nitrides suggest AlxGa1-xN based LEDs can be new alternative commer-cially viable deep ultra-violet light sources. Due to a sig-nificant difference in the lattice parameters of GaN and AlN, AlxGa1-xN substrates would be preferable to either GaN or AlN for ultraviol...

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Bibliographic Details
Main Authors:	Novikov, Sergei V., Staddon, C.R., Sahonta, S-L, Oliver, R.A., Humphreys, C.J., Foxon, C.T.
Format:	Article
Published:	Wiley-VCH Verlag Gmbh & Co 2016
Subjects:	Molecular bean epitaxy; Semiconducting III-V materials; Nitrides; Substrates
Online Access:	https://eprints.nottingham.ac.uk/32814/

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