Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source
Recent developments with group III nitrides suggest AlxGa1-xN based LEDs can be new alternative commer-cially viable deep ultra-violet light sources. Due to a sig-nificant difference in the lattice parameters of GaN and AlN, AlxGa1-xN substrates would be preferable to either GaN or AlN for ultraviol...
| Main Authors: | , , , , , |
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| Format: | Article |
| Published: |
Wiley-VCH Verlag Gmbh & Co
2016
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| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/32814/ |