Growth Of Gan Films On Gaas (100) Substrate By Rf-Sputtering And E-Beam Evaporation Techniques

Kajian ini menunjukkan penumbuhan lapisan gallium nitrida (GaN) ke atas substrat gallium arsenida (GaAs) berliang melalui kaedah percikan frekuensi radio dan penyejat alur elektron. Sebagai perbandingan, penumbuhan secara terus ke atas substrat GaAs dan lapisan penampan nitrida seperti aluminum nitr...

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Main Author:	Md Taib, Muhamad Ikram
Format:	Thesis
Published:	2016
Subjects:	QC1 Physics (General)
Online Access:	http://ezproxy.usm.my/login?url=http://ethesis.usm.my/jspui http://ezproxy.usm.my/login?url=http://ethesis.usm.my/jspui http://eprints.usm.my/31850/1/MUHAMAD_IKRAM_BIN_MD_TAIB_24(NN).pdf

id	usm-31850
recordtype	eprints
spelling	usm-318502018-05-17T03:10:46Z Growth Of Gan Films On Gaas (100) Substrate By Rf-Sputtering And E-Beam Evaporation Techniques Md Taib, Muhamad Ikram QC1 Physics (General) Kajian ini menunjukkan penumbuhan lapisan gallium nitrida (GaN) ke atas substrat gallium arsenida (GaAs) berliang melalui kaedah percikan frekuensi radio dan penyejat alur elektron. Sebagai perbandingan, penumbuhan secara terus ke atas substrat GaAs dan lapisan penampan nitrida seperti aluminum nitrida (AlN) dan titanium nitrida (TiN). Pada peringkat pertama kajian ini, parameter yang sesuai untuk menghasilkan GaAs berliang yang berkualiti dengan ketumpatan dan taburan yang seragam telah diperolehi. Didapati bahawa keseragaman dan ketumpatan liang yang tinggi boleh dicapai dengan campuran larutan dimetilformamida (DMF) dan asid sulfurik (H2SO4) dengan kepekatan DMF 75% selama 10 minit, pada ketumpatan arus 250 mA/cm2. Pada peringkat seterusnya, lapisan GaN ditumbuhkan secara berasingan ke atas permukaan yang berbeza melalui percikan frekuensi radio dan penyejat alur elektron. Bukti pengikatan Ga-N di dalam lapisan GaN diperhatikan melalui pengukuran spektroskopi fotoelektron sinar-x (XPS). This work studies the structure, morphology and optical properties of GaN layer grown on porous GaAs/GaAs substrate by radio frequency (RF) sputtering and electron beam (e-beam) evaporation. For comparison, the GaN layer was also grown directly on GaAs substrate and nitride based buffer layers, i.e. aluminum nitride (AlN) and titanium nitride (TiN). In the first part of this work, the best parameters used to obtain good quality porous GaAs on GaAs substrate with uniform distribution and density were determined. It was found that uniform distribution and high density of pores can be fabricated with a mixed solution of dimethylformamide (DMF) and sulphuric acid (H2SO4) with 75% DMF concentration for 10 minutes, at a current density of 250 mA/cm2. In the next stage, the GaN layer was grown separately on different surfaces using RF-sputtering and e-beam evaporation. The evidence of Ga-N bondings inside the GaN layer was observed by XPS measurement. 2016-04 Thesis NonPeerReviewed application/pdf http://eprints.usm.my/31850/1/MUHAMAD_IKRAM_BIN_MD_TAIB_24(NN).pdf http://ezproxy.usm.my/login?url=http://ethesis.usm.my/jspui Md Taib, Muhamad Ikram (2016) Growth Of Gan Films On Gaas (100) Substrate By Rf-Sputtering And E-Beam Evaporation Techniques. Masters thesis, Universiti Sains Malaysia. http://eprints.usm.my/31850/
institution	Universiti Sains Malaysia Universiti Sains Malaysia
repository_type	Digital Repository
institution_category	Local University
building	USM Repository
collection	Online Access
topic	QC1 Physics (General)
spellingShingle	QC1 Physics (General) Md Taib, Muhamad Ikram Growth Of Gan Films On Gaas (100) Substrate By Rf-Sputtering And E-Beam Evaporation Techniques
description	Kajian ini menunjukkan penumbuhan lapisan gallium nitrida (GaN) ke atas substrat gallium arsenida (GaAs) berliang melalui kaedah percikan frekuensi radio dan penyejat alur elektron. Sebagai perbandingan, penumbuhan secara terus ke atas substrat GaAs dan lapisan penampan nitrida seperti aluminum nitrida (AlN) dan titanium nitrida (TiN). Pada peringkat pertama kajian ini, parameter yang sesuai untuk menghasilkan GaAs berliang yang berkualiti dengan ketumpatan dan taburan yang seragam telah diperolehi. Didapati bahawa keseragaman dan ketumpatan liang yang tinggi boleh dicapai dengan campuran larutan dimetilformamida (DMF) dan asid sulfurik (H2SO4) dengan kepekatan DMF 75% selama 10 minit, pada ketumpatan arus 250 mA/cm2. Pada peringkat seterusnya, lapisan GaN ditumbuhkan secara berasingan ke atas permukaan yang berbeza melalui percikan frekuensi radio dan penyejat alur elektron. Bukti pengikatan Ga-N di dalam lapisan GaN diperhatikan melalui pengukuran spektroskopi fotoelektron sinar-x (XPS). This work studies the structure, morphology and optical properties of GaN layer grown on porous GaAs/GaAs substrate by radio frequency (RF) sputtering and electron beam (e-beam) evaporation. For comparison, the GaN layer was also grown directly on GaAs substrate and nitride based buffer layers, i.e. aluminum nitride (AlN) and titanium nitride (TiN). In the first part of this work, the best parameters used to obtain good quality porous GaAs on GaAs substrate with uniform distribution and density were determined. It was found that uniform distribution and high density of pores can be fabricated with a mixed solution of dimethylformamide (DMF) and sulphuric acid (H2SO4) with 75% DMF concentration for 10 minutes, at a current density of 250 mA/cm2. In the next stage, the GaN layer was grown separately on different surfaces using RF-sputtering and e-beam evaporation. The evidence of Ga-N bondings inside the GaN layer was observed by XPS measurement.
format	Thesis
author	Md Taib, Muhamad Ikram
author_facet	Md Taib, Muhamad Ikram
author_sort	Md Taib, Muhamad Ikram
title	Growth Of Gan Films On Gaas (100) Substrate By Rf-Sputtering And E-Beam Evaporation Techniques
title_short	Growth Of Gan Films On Gaas (100) Substrate By Rf-Sputtering And E-Beam Evaporation Techniques
title_full	Growth Of Gan Films On Gaas (100) Substrate By Rf-Sputtering And E-Beam Evaporation Techniques
title_fullStr	Growth Of Gan Films On Gaas (100) Substrate By Rf-Sputtering And E-Beam Evaporation Techniques
title_full_unstemmed	Growth Of Gan Films On Gaas (100) Substrate By Rf-Sputtering And E-Beam Evaporation Techniques
title_sort	growth of gan films on gaas (100) substrate by rf-sputtering and e-beam evaporation techniques
publishDate	2016
url	http://ezproxy.usm.my/login?url=http://ethesis.usm.my/jspui http://ezproxy.usm.my/login?url=http://ethesis.usm.my/jspui http://eprints.usm.my/31850/1/MUHAMAD_IKRAM_BIN_MD_TAIB_24(NN).pdf
first_indexed	2018-09-08T08:29:24Z
last_indexed	2018-09-08T08:29:24Z
_version_	1611027305521479680

Growth Of Gan Films On Gaas (100) Substrate By Rf-Sputtering And E-Beam Evaporation Techniques

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