Electrical and optical characterization of Mg doping in GaN
Apossible evidence of Mg related emission in Mg doped GaN material is observed inoptical measurement, even without thermal annealing. Meanwhile, the electrical properties of the sample improve when Ni/Au contact layer was annealed up to 400°C, but degrade at further temperature. We propose that suc...
| Main Authors: | , , , , |
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| Format: | Article |
| Published: |
Trans Tech Publications, Switzerland
2013
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| Subjects: | |
| Online Access: | http://eprints.um.edu.my/9783/ http://eprints.um.edu.my/9783/1/00011485_86655.pdf |