Interband and Intersubband Optical Transition Matrix Elements of Ge/Gesisn Quantum Well

The interband and intersubband optical transition matrix elements of a tensile-strained Ge/GeSiSn quantum well are investigated by using an 8-band k·p method. For conduction to valence band interband optical transition, the S→X,Y,Z transitions are dominant. For intersubband optical transition includ...

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Main Author:	W. J., Fan
Format:	Article
Published:	ENCON 2013 2013
Subjects:	Q Science (General)
Online Access:	http://ir.unimas.my/8162/ http://ir.unimas.my/8162/ http://ir.unimas.my/8162/

id	unimas-8162
recordtype	eprints
spelling	unimas-81622015-07-02T06:21:49Z http://ir.unimas.my/8162/ Interband and Intersubband Optical Transition Matrix Elements of Ge/Gesisn Quantum Well W. J., Fan Q Science (General) The interband and intersubband optical transition matrix elements of a tensile-strained Ge/GeSiSn quantum well are investigated by using an 8-band k·p method. For conduction to valence band interband optical transition, the S→X,Y,Z transitions are dominant. For intersubband optical transition including the conduction to conduction band and the valence to valence band transitions, the S→X,Y,Z transitions and X,Y,Z →S transitions are significant due to the strong interaction between the conduction band and valence band, and the S, X,Y,Z → S,X,Y,Z transitions are greatly depressed, which are completely different with the results of single band effective mass approximation. The results will be helpful to design optoelectronic devices, such as Laser and LED diodes, photodetector, and solar cell. ENCON 2013 2013 Article PeerReviewed W. J., Fan (2013) Interband and Intersubband Optical Transition Matrix Elements of Ge/Gesisn Quantum Well. ENCON 2013. http://rpsonline.com.sg/proceedings/9789810760595/html/015.xml doi: 10.3850/978-981-07-6059-5_015
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Malaysia Sarawak
building	UNIMAS Institutional Repository
collection	Online Access
topic	Q Science (General)
spellingShingle	Q Science (General) W. J., Fan Interband and Intersubband Optical Transition Matrix Elements of Ge/Gesisn Quantum Well
description	The interband and intersubband optical transition matrix elements of a tensile-strained Ge/GeSiSn quantum well are investigated by using an 8-band k·p method. For conduction to valence band interband optical transition, the S→X,Y,Z transitions are dominant. For intersubband optical transition including the conduction to conduction band and the valence to valence band transitions, the S→X,Y,Z transitions and X,Y,Z →S transitions are significant due to the strong interaction between the conduction band and valence band, and the S, X,Y,Z → S,X,Y,Z transitions are greatly depressed, which are completely different with the results of single band effective mass approximation. The results will be helpful to design optoelectronic devices, such as Laser and LED diodes, photodetector, and solar cell.
format	Article
author	W. J., Fan
author_facet	W. J., Fan
author_sort	W. J., Fan
title	Interband and Intersubband Optical Transition Matrix Elements of Ge/Gesisn Quantum Well
title_short	Interband and Intersubband Optical Transition Matrix Elements of Ge/Gesisn Quantum Well
title_full	Interband and Intersubband Optical Transition Matrix Elements of Ge/Gesisn Quantum Well
title_fullStr	Interband and Intersubband Optical Transition Matrix Elements of Ge/Gesisn Quantum Well
title_full_unstemmed	Interband and Intersubband Optical Transition Matrix Elements of Ge/Gesisn Quantum Well
title_sort	interband and intersubband optical transition matrix elements of ge/gesisn quantum well
publisher	ENCON 2013
publishDate	2013
url	http://ir.unimas.my/8162/ http://ir.unimas.my/8162/ http://ir.unimas.my/8162/
first_indexed	2018-09-06T15:32:05Z
last_indexed	2018-09-06T15:32:05Z
_version_	1610872704499449856

Interband and Intersubband Optical Transition Matrix Elements of Ge/Gesisn Quantum Well

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