Study of intersubband transitions in Si1-xGex/Si quantum wells using 14-band k?p model

Optical intersubband transitions (ISTs) for both in-plane polarization (TE) and normalto-plane polarization (TM) in p-type Si1-xGex/Si multiple quantum wells (MQWs) are investigated using 14-band k?p model combined with the envelope-function Fourier expansion method. The results show that the amplit...

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Bibliographic Details
Main Author: Tuan Norhafizah binti Tuan Zakaria
Other Authors: Liu, W.
Format: Journal
Published: International Journal of Nanoelectronics and Materials, Universiti Malaysia Perlis 2008
Subjects:
Online Access:http://www.myjurnal.my/public/article-view.php?id=17980