Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and GaAs

Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and GaAs

Nearly ballistic carbon nanotube array transistors are realized with current densities outmatching conventional semiconductors.

Bibliographic Details
Main Authors: Brady, Gerald J., Way, Austin J., Safron, Nathaniel S., Evensen, Harold T., Gopalan, Padma, Arnold, Michael S.
Format: Online
Language:English
Published: American Association for the Advancement of Science 2016
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5010372/

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5010372/

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