Anomalous enhancement of the sheet carrier density beyond the classic limit on a SrTiO3 surface
Electrostatic carrier accumulation on an insulating (100) surface of SrTiO3 by fabricating a field effect transistor with Parylene-C (6 nm)/HfO2 (20 nm) bilayer gate insulator has revealed a mystifying phenomenon: sheet carrier density is about 10 times as large as ( is the sheet capacitance of th...
| Main Authors: | , , |
|---|---|
| Format: | Online |
| Language: | English |
| Published: |
Nature Publishing Group
2016
|
| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4865841/ |