Enhanced and continuous electrostatic carrier doping on the SrTiO3 surface
Paraelectrical tuning of a charge carrier density as high as 1013 cm−2 in the presence of a high electronic carrier mobility on the delicate surfaces of correlated oxides, is a key to the technological breakthrough of a field effect transistor (FET) utilising the metal-nonmetal transition. Here we i...
| Main Authors: | , , , , |
|---|---|
| Format: | Online |
| Language: | English |
| Published: |
Nature Publishing Group
2013
|
| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3634102/ |