Athermal domain-wall creep near a ferroelectric quantum critical point
Ferroelectric domain walls are typically stationary because of the presence of a pinning potential. Nevertheless, thermally activated, irreversible creep motion can occur under a moderate electric field, thereby underlying rewritable and non-volatile memory applications. Conversely, as the temperatu...
| Main Authors: | , , , |
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| Format: | Online |
| Language: | English |
| Published: |
Nature Publishing Group
2016
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4757756/ |