Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure

The anomalous Hall effect (AHE) arises from the interplay of spin-orbit interactions and ferromagnetic order and is a potentially useful probe of electron spin polarization, especially in nanoscale systems where direct measurement is not feasible. While AHE is rather well-understood in metallic ferr...

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Main Authors:	Oveshnikov, L. N., Kulbachinskii, V. A., Davydov, A. B., Aronzon, B. A., Rozhansky, I. V., Averkiev, N. S., Kugel, K. I., Tripathi, V.
Format:	Online
Language:	English
Published:	Nature Publishing Group 2015
Online Access:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4657011/

id	pubmed-4657011
recordtype	oai_dc
spelling	pubmed-46570112015-11-30 Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure Oveshnikov, L. N. Kulbachinskii, V. A. Davydov, A. B. Aronzon, B. A. Rozhansky, I. V. Averkiev, N. S. Kugel, K. I. Tripathi, V. Article The anomalous Hall effect (AHE) arises from the interplay of spin-orbit interactions and ferromagnetic order and is a potentially useful probe of electron spin polarization, especially in nanoscale systems where direct measurement is not feasible. While AHE is rather well-understood in metallic ferromagnets, much less is known about the relevance of different physical mechanisms governing AHE in insulators. As ferromagnetic insulators, but not metals, lend themselves to gate-control of electron spin polarization, understanding AHE in the insulating state is valuable from the point of view of spintronic applications. Among the mechanisms proposed in the literature for AHE in insulators, the one related to a geometric (Berry) phase effect has been elusive in past studies. The recent discovery of quantized AHE in magnetically doped topological insulators - essentially a Berry phase effect - provides strong additional motivation to undertake more careful search for geometric phase effects in AHE in the magnetic semiconductors. Here we report our experiments on the temperature and magnetic field dependences of AHE in insulating, strongly-disordered two-dimensional Mn delta-doped semiconductor heterostructures in the hopping regime. In particular, it is shown that at sufficiently low temperatures, the mechanism of AHE related to the Berry phase is favoured. Nature Publishing Group 2015-11-24 /pmc/articles/PMC4657011/ /pubmed/26596472 http://dx.doi.org/10.1038/srep17158 Text en Copyright © 2015, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
repository_type	Open Access Journal
institution_category	Foreign Institution
institution	US National Center for Biotechnology Information
building	NCBI PubMed
collection	Online Access
language	English
format	Online
author	Oveshnikov, L. N. Kulbachinskii, V. A. Davydov, A. B. Aronzon, B. A. Rozhansky, I. V. Averkiev, N. S. Kugel, K. I. Tripathi, V.
spellingShingle	Oveshnikov, L. N. Kulbachinskii, V. A. Davydov, A. B. Aronzon, B. A. Rozhansky, I. V. Averkiev, N. S. Kugel, K. I. Tripathi, V. Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure
author_facet	Oveshnikov, L. N. Kulbachinskii, V. A. Davydov, A. B. Aronzon, B. A. Rozhansky, I. V. Averkiev, N. S. Kugel, K. I. Tripathi, V.
author_sort	Oveshnikov, L. N.
title	Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure
title_short	Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure
title_full	Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure
title_fullStr	Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure
title_full_unstemmed	Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure
title_sort	berry phase mechanism of the anomalous hall effect in a disordered two-dimensional magnetic semiconductor structure
description	The anomalous Hall effect (AHE) arises from the interplay of spin-orbit interactions and ferromagnetic order and is a potentially useful probe of electron spin polarization, especially in nanoscale systems where direct measurement is not feasible. While AHE is rather well-understood in metallic ferromagnets, much less is known about the relevance of different physical mechanisms governing AHE in insulators. As ferromagnetic insulators, but not metals, lend themselves to gate-control of electron spin polarization, understanding AHE in the insulating state is valuable from the point of view of spintronic applications. Among the mechanisms proposed in the literature for AHE in insulators, the one related to a geometric (Berry) phase effect has been elusive in past studies. The recent discovery of quantized AHE in magnetically doped topological insulators - essentially a Berry phase effect - provides strong additional motivation to undertake more careful search for geometric phase effects in AHE in the magnetic semiconductors. Here we report our experiments on the temperature and magnetic field dependences of AHE in insulating, strongly-disordered two-dimensional Mn delta-doped semiconductor heterostructures in the hopping regime. In particular, it is shown that at sufficiently low temperatures, the mechanism of AHE related to the Berry phase is favoured.
publisher	Nature Publishing Group
publishDate	2015
url	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4657011/
_version_	1613505087890522112

Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure

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