Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure

Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure

The anomalous Hall effect (AHE) arises from the interplay of spin-orbit interactions and ferromagnetic order and is a potentially useful probe of electron spin polarization, especially in nanoscale systems where direct measurement is not feasible. While AHE is rather well-understood in metallic ferr...

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Bibliographic Details
Main Authors: Oveshnikov, L. N., Kulbachinskii, V. A., Davydov, A. B., Aronzon, B. A., Rozhansky, I. V., Averkiev, N. S., Kugel, K. I., Tripathi, V.
Format: Online
Language:English
Published: Nature Publishing Group 2015
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4657011/

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https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4657011/

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