Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer

Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer

In this study, the physical and electrical characteristics of Al2O3/La2O3/Al2O3/Si stack structures affected by the thickness of an Al2O3 barrier layer between Si substrate and La2O3 layer are investigated after a rapid thermal annealing (RTA) treatment. Time of flight secondary ion mass spectrometr...

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Main Authors: Wang, Xing, Liu, Hong-Xia, Fei, Chen-Xi, Yin, Shu-Ying, Fan, Xiao-Jiao
Format: Online
Language:English
Published: Springer US 2015
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4398676/
id pubmed-4398676
recordtype oai_dc
spelling pubmed-43986762015-04-20 Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer Wang, Xing Liu, Hong-Xia Fei, Chen-Xi Yin, Shu-Ying Fan, Xiao-Jiao Nano Express In this study, the physical and electrical characteristics of Al2O3/La2O3/Al2O3/Si stack structures affected by the thickness of an Al2O3 barrier layer between Si substrate and La2O3 layer are investigated after a rapid thermal annealing (RTA) treatment. Time of flight secondary ion mass spectrometry (TOF-SIMS) and X-ray photoelectron spectroscopy (XPS) tests indicate that an Al2O3 barrier layer (15 atomic layer deposition (ALD) cycles, approximately 1.5 nm) plays an important role in suppressing the diffusion of silicon atoms from Si substrate into the La2O3 layer during the annealing process. As a result, some properties of La2O3 dielectric degenerated by the diffusion of Si atoms are improved. Electrical measurements (C-V, J-V) show that the thickness of Al2O3 barrier layer can affect the shift of flat band voltage (VFB) and the magnitude of gate leakage current density. Springer US 2015-03-19 /pmc/articles/PMC4398676/ /pubmed/25897303 http://dx.doi.org/10.1186/s11671-015-0842-2 Text en © Wang et al.; licensee Springer. 2015 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.
repository_type Open Access Journal
institution_category Foreign Institution
institution US National Center for Biotechnology Information
building NCBI PubMed
collection Online Access
language English
format Online
author Wang, Xing
Liu, Hong-Xia
Fei, Chen-Xi
Yin, Shu-Ying
Fan, Xiao-Jiao
spellingShingle Wang, Xing
Liu, Hong-Xia
Fei, Chen-Xi
Yin, Shu-Ying
Fan, Xiao-Jiao
Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer
author_facet Wang, Xing
Liu, Hong-Xia
Fei, Chen-Xi
Yin, Shu-Ying
Fan, Xiao-Jiao
author_sort Wang, Xing
title Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer
title_short Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer
title_full Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer
title_fullStr Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer
title_full_unstemmed Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer
title_sort silicon diffusion control in atomic-layer-deposited al2o3/la2o3/al2o3 gate stacks using an al2o3 barrier layer
description In this study, the physical and electrical characteristics of Al2O3/La2O3/Al2O3/Si stack structures affected by the thickness of an Al2O3 barrier layer between Si substrate and La2O3 layer are investigated after a rapid thermal annealing (RTA) treatment. Time of flight secondary ion mass spectrometry (TOF-SIMS) and X-ray photoelectron spectroscopy (XPS) tests indicate that an Al2O3 barrier layer (15 atomic layer deposition (ALD) cycles, approximately 1.5 nm) plays an important role in suppressing the diffusion of silicon atoms from Si substrate into the La2O3 layer during the annealing process. As a result, some properties of La2O3 dielectric degenerated by the diffusion of Si atoms are improved. Electrical measurements (C-V, J-V) show that the thickness of Al2O3 barrier layer can affect the shift of flat band voltage (VFB) and the magnitude of gate leakage current density.
publisher Springer US
publishDate 2015
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4398676/
_version_ 1613212190037245952

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