Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer
In this study, the physical and electrical characteristics of Al2O3/La2O3/Al2O3/Si stack structures affected by the thickness of an Al2O3 barrier layer between Si substrate and La2O3 layer are investigated after a rapid thermal annealing (RTA) treatment. Time of flight secondary ion mass spectrometr...
| Main Authors: | , , , , |
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| Format: | Online |
| Language: | English |
| Published: |
Springer US
2015
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4398676/ |