Next Generation Device Grade Silicon-Germanium on Insulator

High quality single crystal silicon-germanium-on-insulator has the potential to facilitate the next generation of photonic and electronic devices. Using a rapid melt growth technique we engineer tailored single crystal silicon-germanium-on-insulator structures with near constant composition over lar...

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Main Authors:	Littlejohns, Callum G., Nedeljkovic, Milos, Mallinson, Christopher F., Watts, John F., Mashanovich, Goran Z., Reed, Graham T., Gardes, Frederic Y.
Format:	Online
Language:	English
Published:	Nature Publishing Group 2015
Online Access:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4319176/

id	pubmed-4319176
recordtype	oai_dc
spelling	pubmed-43191762015-02-13 Next Generation Device Grade Silicon-Germanium on Insulator Littlejohns, Callum G. Nedeljkovic, Milos Mallinson, Christopher F. Watts, John F. Mashanovich, Goran Z. Reed, Graham T. Gardes, Frederic Y. Article High quality single crystal silicon-germanium-on-insulator has the potential to facilitate the next generation of photonic and electronic devices. Using a rapid melt growth technique we engineer tailored single crystal silicon-germanium-on-insulator structures with near constant composition over large areas. The proposed structures avoid the problem of laterally graded SiGe compositions, caused by preferential Si rich solid formation, encountered in straight SiGe wires by providing radiating elements distributed along the structures. This method enables the fabrication of multiple single crystal silicon-germanium-on-insulator layers of different compositions, on the same Si wafer, using only a single deposition process and a single anneal process, simply by modifying the structural design and/or the anneal temperature. This facilitates a host of device designs, within a relatively simple growth environment, as compared to the complexities of other methods, and also offers flexibility in device designs within that growth environment. Nature Publishing Group 2015-02-06 /pmc/articles/PMC4319176/ /pubmed/25656076 http://dx.doi.org/10.1038/srep08288 Text en Copyright © 2015, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
repository_type	Open Access Journal
institution_category	Foreign Institution
institution	US National Center for Biotechnology Information
building	NCBI PubMed
collection	Online Access
language	English
format	Online
author	Littlejohns, Callum G. Nedeljkovic, Milos Mallinson, Christopher F. Watts, John F. Mashanovich, Goran Z. Reed, Graham T. Gardes, Frederic Y.
spellingShingle	Littlejohns, Callum G. Nedeljkovic, Milos Mallinson, Christopher F. Watts, John F. Mashanovich, Goran Z. Reed, Graham T. Gardes, Frederic Y. Next Generation Device Grade Silicon-Germanium on Insulator
author_facet	Littlejohns, Callum G. Nedeljkovic, Milos Mallinson, Christopher F. Watts, John F. Mashanovich, Goran Z. Reed, Graham T. Gardes, Frederic Y.
author_sort	Littlejohns, Callum G.
title	Next Generation Device Grade Silicon-Germanium on Insulator
title_short	Next Generation Device Grade Silicon-Germanium on Insulator
title_full	Next Generation Device Grade Silicon-Germanium on Insulator
title_fullStr	Next Generation Device Grade Silicon-Germanium on Insulator
title_full_unstemmed	Next Generation Device Grade Silicon-Germanium on Insulator
title_sort	next generation device grade silicon-germanium on insulator
description	High quality single crystal silicon-germanium-on-insulator has the potential to facilitate the next generation of photonic and electronic devices. Using a rapid melt growth technique we engineer tailored single crystal silicon-germanium-on-insulator structures with near constant composition over large areas. The proposed structures avoid the problem of laterally graded SiGe compositions, caused by preferential Si rich solid formation, encountered in straight SiGe wires by providing radiating elements distributed along the structures. This method enables the fabrication of multiple single crystal silicon-germanium-on-insulator layers of different compositions, on the same Si wafer, using only a single deposition process and a single anneal process, simply by modifying the structural design and/or the anneal temperature. This facilitates a host of device designs, within a relatively simple growth environment, as compared to the complexities of other methods, and also offers flexibility in device designs within that growth environment.
publisher	Nature Publishing Group
publishDate	2015
url	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4319176/
_version_	1613184871803387904

Next Generation Device Grade Silicon-Germanium on Insulator

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