Coexistence of memory resistance and memory capacitance in TiO2 solid-state devices

Coexistence of memory resistance and memory capacitance in TiO2 solid-state devices

This work exploits the coexistence of both resistance and capacitance memory effects in TiO2-based two-terminal cells. Our Pt/TiO2/TiO x /Pt devices exhibit an interesting combination of hysteresis and non-zero crossing in their current-voltage (I-V) characteristic that indicates the presence of cap...

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Main Authors: Salaoru, Iulia, Li, Qingjiang, Khiat, Ali, Prodromakis, Themistoklis
Format: Online
Language:English
Published: Springer 2014
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4189047/
id pubmed-4189047
recordtype oai_dc
spelling pubmed-41890472014-10-08 Coexistence of memory resistance and memory capacitance in TiO2 solid-state devices Salaoru, Iulia Li, Qingjiang Khiat, Ali Prodromakis, Themistoklis Nano Express This work exploits the coexistence of both resistance and capacitance memory effects in TiO2-based two-terminal cells. Our Pt/TiO2/TiO x /Pt devices exhibit an interesting combination of hysteresis and non-zero crossing in their current-voltage (I-V) characteristic that indicates the presence of capacitive states. Our experimental results demonstrate that both resistance and capacitance states can be simultaneously set via either voltage cycling and/or voltage pulses. We argue that these state modulations occur due to bias-induced reduction of the TiO x active layer via the displacement of ionic species. Springer 2014-10-04 /pmc/articles/PMC4189047/ /pubmed/25298759 http://dx.doi.org/10.1186/1556-276X-9-552 Text en Copyright © 2014 Salaoru et al.; licensee Springer. http://creativecommons.org/licenses/by/4.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.
repository_type Open Access Journal
institution_category Foreign Institution
institution US National Center for Biotechnology Information
building NCBI PubMed
collection Online Access
language English
format Online
author Salaoru, Iulia
Li, Qingjiang
Khiat, Ali
Prodromakis, Themistoklis
spellingShingle Salaoru, Iulia
Li, Qingjiang
Khiat, Ali
Prodromakis, Themistoklis
Coexistence of memory resistance and memory capacitance in TiO2 solid-state devices
author_facet Salaoru, Iulia
Li, Qingjiang
Khiat, Ali
Prodromakis, Themistoklis
author_sort Salaoru, Iulia
title Coexistence of memory resistance and memory capacitance in TiO2 solid-state devices
title_short Coexistence of memory resistance and memory capacitance in TiO2 solid-state devices
title_full Coexistence of memory resistance and memory capacitance in TiO2 solid-state devices
title_fullStr Coexistence of memory resistance and memory capacitance in TiO2 solid-state devices
title_full_unstemmed Coexistence of memory resistance and memory capacitance in TiO2 solid-state devices
title_sort coexistence of memory resistance and memory capacitance in tio2 solid-state devices
description This work exploits the coexistence of both resistance and capacitance memory effects in TiO2-based two-terminal cells. Our Pt/TiO2/TiO x /Pt devices exhibit an interesting combination of hysteresis and non-zero crossing in their current-voltage (I-V) characteristic that indicates the presence of capacitive states. Our experimental results demonstrate that both resistance and capacitance states can be simultaneously set via either voltage cycling and/or voltage pulses. We argue that these state modulations occur due to bias-induced reduction of the TiO x active layer via the displacement of ionic species.
publisher Springer
publishDate 2014
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4189047/
_version_ 1613141752694177792

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