Ab initio electronic properties of dual phosphorus monolayers in silicon

Ab initio electronic properties of dual phosphorus monolayers in silicon

In the midst of the epitaxial circuitry revolution in silicon technology, we look ahead to the next paradigm shift: effective use of the third dimension - in particular, its combination with epitaxial technology. We perform ab initio calculations of atomically thin epitaxial bilayers in silicon, inv...

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Main Authors: Drumm, Daniel W, Per, Manolo C, Budi, Akin, Hollenberg, Lloyd CL, Russo, Salvy P
Format: Online
Language:English
Published: Springer 2014
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4158386/
id pubmed-4158386
recordtype oai_dc
spelling pubmed-41583862014-09-22 Ab initio electronic properties of dual phosphorus monolayers in silicon Drumm, Daniel W Per, Manolo C Budi, Akin Hollenberg, Lloyd CL Russo, Salvy P Nano Express In the midst of the epitaxial circuitry revolution in silicon technology, we look ahead to the next paradigm shift: effective use of the third dimension - in particular, its combination with epitaxial technology. We perform ab initio calculations of atomically thin epitaxial bilayers in silicon, investigating the fundamental electronic properties of monolayer pairs. Quantitative band splittings and the electronic density are presented, along with effects of the layers’ relative alignment and comments on disordered systems, and for the first time, the effective electronic widths of such device components are calculated. Springer 2014-08-28 /pmc/articles/PMC4158386/ /pubmed/25246862 http://dx.doi.org/10.1186/1556-276X-9-443 Text en Copyright © 2014 Drumm et al.; licensee Springer. http://creativecommons.org/licenses/by/4.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.
repository_type Open Access Journal
institution_category Foreign Institution
institution US National Center for Biotechnology Information
building NCBI PubMed
collection Online Access
language English
format Online
author Drumm, Daniel W
Per, Manolo C
Budi, Akin
Hollenberg, Lloyd CL
Russo, Salvy P
spellingShingle Drumm, Daniel W
Per, Manolo C
Budi, Akin
Hollenberg, Lloyd CL
Russo, Salvy P
Ab initio electronic properties of dual phosphorus monolayers in silicon
author_facet Drumm, Daniel W
Per, Manolo C
Budi, Akin
Hollenberg, Lloyd CL
Russo, Salvy P
author_sort Drumm, Daniel W
title Ab initio electronic properties of dual phosphorus monolayers in silicon
title_short Ab initio electronic properties of dual phosphorus monolayers in silicon
title_full Ab initio electronic properties of dual phosphorus monolayers in silicon
title_fullStr Ab initio electronic properties of dual phosphorus monolayers in silicon
title_full_unstemmed Ab initio electronic properties of dual phosphorus monolayers in silicon
title_sort ab initio electronic properties of dual phosphorus monolayers in silicon
description In the midst of the epitaxial circuitry revolution in silicon technology, we look ahead to the next paradigm shift: effective use of the third dimension - in particular, its combination with epitaxial technology. We perform ab initio calculations of atomically thin epitaxial bilayers in silicon, investigating the fundamental electronic properties of monolayer pairs. Quantitative band splittings and the electronic density are presented, along with effects of the layers’ relative alignment and comments on disordered systems, and for the first time, the effective electronic widths of such device components are calculated.
publisher Springer
publishDate 2014
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4158386/
_version_ 1613132160439418880

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