Ab initio electronic properties of dual phosphorus monolayers in silicon
In the midst of the epitaxial circuitry revolution in silicon technology, we look ahead to the next paradigm shift: effective use of the third dimension - in particular, its combination with epitaxial technology. We perform ab initio calculations of atomically thin epitaxial bilayers in silicon, inv...
Main Authors: | , , , , |
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Format: | Online |
Language: | English |
Published: |
Springer
2014
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Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4158386/ |