Ab initio electronic properties of dual phosphorus monolayers in silicon

In the midst of the epitaxial circuitry revolution in silicon technology, we look ahead to the next paradigm shift: effective use of the third dimension - in particular, its combination with epitaxial technology. We perform ab initio calculations of atomically thin epitaxial bilayers in silicon, inv...

Full description

Bibliographic Details
Main Authors: Drumm, Daniel W, Per, Manolo C, Budi, Akin, Hollenberg, Lloyd CL, Russo, Salvy P
Format: Online
Language:English
Published: Springer 2014
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4158386/