Stochastic switching of TiO2-based memristive devices with identical initial memory states

Stochastic switching of TiO2-based memristive devices with identical initial memory states

In this work, we show that identical TiO2-based memristive devices that possess the same initial resistive states are only phenomenologically similar as their internal structures may vary significantly, which could render quite dissimilar switching dynamics. We experimentally demonstrated that the r...

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Main Authors: Li, Qingjiang, Khiat, Ali, Salaoru, Iulia, Xu, Hui, Prodromakis, Themistoklis
Format: Online
Language:English
Published: Springer 2014
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4067684/
id pubmed-4067684
recordtype oai_dc
spelling pubmed-40676842014-07-03 Stochastic switching of TiO2-based memristive devices with identical initial memory states Li, Qingjiang Khiat, Ali Salaoru, Iulia Xu, Hui Prodromakis, Themistoklis Nano Express In this work, we show that identical TiO2-based memristive devices that possess the same initial resistive states are only phenomenologically similar as their internal structures may vary significantly, which could render quite dissimilar switching dynamics. We experimentally demonstrated that the resistive switching of practical devices with similar initial states could occur at different programming stimuli cycles. We argue that similar memory states can be transcribed via numerous distinct active core states through the dissimilar reduced TiO2-x filamentary distributions. Our hypothesis was finally verified via simulated results of the memory state evolution, by taking into account dissimilar initial filamentary distribution. Springer 2014-06-10 /pmc/articles/PMC4067684/ /pubmed/24994953 http://dx.doi.org/10.1186/1556-276X-9-293 Text en Copyright © 2014 Li et al.; licensee Springer. http://creativecommons.org/licenses/by/4.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.
repository_type Open Access Journal
institution_category Foreign Institution
institution US National Center for Biotechnology Information
building NCBI PubMed
collection Online Access
language English
format Online
author Li, Qingjiang
Khiat, Ali
Salaoru, Iulia
Xu, Hui
Prodromakis, Themistoklis
spellingShingle Li, Qingjiang
Khiat, Ali
Salaoru, Iulia
Xu, Hui
Prodromakis, Themistoklis
Stochastic switching of TiO2-based memristive devices with identical initial memory states
author_facet Li, Qingjiang
Khiat, Ali
Salaoru, Iulia
Xu, Hui
Prodromakis, Themistoklis
author_sort Li, Qingjiang
title Stochastic switching of TiO2-based memristive devices with identical initial memory states
title_short Stochastic switching of TiO2-based memristive devices with identical initial memory states
title_full Stochastic switching of TiO2-based memristive devices with identical initial memory states
title_fullStr Stochastic switching of TiO2-based memristive devices with identical initial memory states
title_full_unstemmed Stochastic switching of TiO2-based memristive devices with identical initial memory states
title_sort stochastic switching of tio2-based memristive devices with identical initial memory states
description In this work, we show that identical TiO2-based memristive devices that possess the same initial resistive states are only phenomenologically similar as their internal structures may vary significantly, which could render quite dissimilar switching dynamics. We experimentally demonstrated that the resistive switching of practical devices with similar initial states could occur at different programming stimuli cycles. We argue that similar memory states can be transcribed via numerous distinct active core states through the dissimilar reduced TiO2-x filamentary distributions. Our hypothesis was finally verified via simulated results of the memory state evolution, by taking into account dissimilar initial filamentary distribution.
publisher Springer
publishDate 2014
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4067684/
_version_ 1612105009921523712

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