Magnetotransport study on as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs strained quantum well structures
We report the observation of thermal annealing- and nitrogen-induced effects on electronic transport properties of as-grown and annealed n- and p-type modulation-doped Ga1 - xInxNyAs1 - y (x = 0.32, y = 0, 0.009, and 0.012) strained quantum well (QW) structures using magnetotransport measurements. S...
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2014
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3976160/ |
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pubmed-39761602014-04-17 Magnetotransport study on as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs strained quantum well structures Dönmez, Ömer Sarcan, Fahrettin Erol, Ayse Gunes, Mustafa Arikan, Mehmet Çetin Puustinen, Janne Guina, Mircea Nano Review We report the observation of thermal annealing- and nitrogen-induced effects on electronic transport properties of as-grown and annealed n- and p-type modulation-doped Ga1 - xInxNyAs1 - y (x = 0.32, y = 0, 0.009, and 0.012) strained quantum well (QW) structures using magnetotransport measurements. Strong and well-resolved Shubnikov de Haas (SdH) oscillations are observed at magnetic fields as low as 3 T and persist to temperatures as high as 20 K, which are used to determine effective mass, 2D carrier density, and Fermi energy. The analysis of temperature dependence of SdH oscillations revealed that the electron mass enhances with increasing nitrogen content. Furthermore, even the current theory of dilute nitrides does not predict a change in hole effective mass; nitrogen dependency of hole effective mass is found and attributed to both strain- and confinement-induced effects on the valence band. Both electron and hole effective masses are changed after thermal annealing process. Although all samples were doped with the same density, the presence of nitrogen in n-type material gives rise to an enhancement in the 2D electron density compared to the 2D hole density as a result of enhanced effective mass due to the effect of nitrogen on conduction band. Our results reveal that effective mass and 2D carrier density can be tailored by nitrogen composition and thermal annealing-induced effects. Springer 2014-03-24 /pmc/articles/PMC3976160/ /pubmed/24661541 http://dx.doi.org/10.1186/1556-276X-9-141 Text en Copyright © 2014 Dönmez et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited. |
| repository_type |
Open Access Journal |
| institution_category |
Foreign Institution |
| institution |
US National Center for Biotechnology Information |
| building |
NCBI PubMed |
| collection |
Online Access |
| language |
English |
| format |
Online |
| author |
Dönmez, Ömer Sarcan, Fahrettin Erol, Ayse Gunes, Mustafa Arikan, Mehmet Çetin Puustinen, Janne Guina, Mircea |
| spellingShingle |
Dönmez, Ömer Sarcan, Fahrettin Erol, Ayse Gunes, Mustafa Arikan, Mehmet Çetin Puustinen, Janne Guina, Mircea Magnetotransport study on as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs strained quantum well structures |
| author_facet |
Dönmez, Ömer Sarcan, Fahrettin Erol, Ayse Gunes, Mustafa Arikan, Mehmet Çetin Puustinen, Janne Guina, Mircea |
| author_sort |
Dönmez, Ömer |
| title |
Magnetotransport study on as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs strained quantum well structures |
| title_short |
Magnetotransport study on as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs strained quantum well structures |
| title_full |
Magnetotransport study on as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs strained quantum well structures |
| title_fullStr |
Magnetotransport study on as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs strained quantum well structures |
| title_full_unstemmed |
Magnetotransport study on as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs strained quantum well structures |
| title_sort |
magnetotransport study on as-grown and annealed n- and p-type modulation-doped gainnas/gaas strained quantum well structures |
| description |
We report the observation of thermal annealing- and nitrogen-induced effects on electronic transport properties of as-grown and annealed n- and p-type modulation-doped Ga1 - xInxNyAs1 - y (x = 0.32, y = 0, 0.009, and 0.012) strained quantum well (QW) structures using magnetotransport measurements. Strong and well-resolved Shubnikov de Haas (SdH) oscillations are observed at magnetic fields as low as 3 T and persist to temperatures as high as 20 K, which are used to determine effective mass, 2D carrier density, and Fermi energy. The analysis of temperature dependence of SdH oscillations revealed that the electron mass enhances with increasing nitrogen content. Furthermore, even the current theory of dilute nitrides does not predict a change in hole effective mass; nitrogen dependency of hole effective mass is found and attributed to both strain- and confinement-induced effects on the valence band. Both electron and hole effective masses are changed after thermal annealing process. Although all samples were doped with the same density, the presence of nitrogen in n-type material gives rise to an enhancement in the 2D electron density compared to the 2D hole density as a result of enhanced effective mass due to the effect of nitrogen on conduction band. Our results reveal that effective mass and 2D carrier density can be tailored by nitrogen composition and thermal annealing-induced effects. |
| publisher |
Springer |
| publishDate |
2014 |
| url |
https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3976160/ |
| _version_ |
1612074360068112384 |