An analysis of Hall mobility in as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs quantum wells
In this study, we investigate the effect of annealing and nitrogen amount on electronic transport properties in n- and p-type-doped Ga0.68In0.32NyAs1 − y/GaAs quantum well (QW) structures with y = 0%, 0.9%, 1.2%, 1.7%. The samples are thermal annealed at 700°C for 60 and 600 s, and Hall effect measu...
| Main Authors: | , , , , , , |
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| Format: | Online |
| Language: | English |
| Published: |
Springer
2012
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3492066/ |