Experimental investigation and numerical modelling of photocurrent oscillations in lattice matched Ga1−x In x N y As1−y /GaAs quantum well p-i-n photodiodes
Photocurrent oscillations, observed at low temperatures in lattice-matched Ga1−x In x N y As1−y /GaAs multiple quantum well (MQW) p-i-n samples, are investigated as a function of applied bias and excitation wavelength and are modelled with the aid of semiconductor simulation software. The oscillatio...
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| Format: | Online |
| Language: | English |
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Springer
2014
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3933184/ |
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pubmed-39331842014-03-07 Experimental investigation and numerical modelling of photocurrent oscillations in lattice matched Ga1−x In x N y As1−y /GaAs quantum well p-i-n photodiodes Royall, Ben Khalil, Hagir Mazzucato, Simone Erol, Ayse Balkan, Naci Nano Express Photocurrent oscillations, observed at low temperatures in lattice-matched Ga1−x In x N y As1−y /GaAs multiple quantum well (MQW) p-i-n samples, are investigated as a function of applied bias and excitation wavelength and are modelled with the aid of semiconductor simulation software. The oscillations appear only at low temperatures and have the highest amplitude when the optical excitation energy is in resonance with the GaInNAs bandgap. They are explained in terms of electron accumulation and the formation of high-field domains in the GaInNAs QWs as a result of the disparity between the photoexcited electron and hole escape rates from the QWs. The application of the external bias results in the motion of the high-field domain towards the anode where the excess charge dissipates from the well adjacent to anode via tunnelling. Springer 2014-02-18 /pmc/articles/PMC3933184/ /pubmed/24548551 http://dx.doi.org/10.1186/1556-276X-9-84 Text en Copyright © 2014 Royall et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited. |
| repository_type |
Open Access Journal |
| institution_category |
Foreign Institution |
| institution |
US National Center for Biotechnology Information |
| building |
NCBI PubMed |
| collection |
Online Access |
| language |
English |
| format |
Online |
| author |
Royall, Ben Khalil, Hagir Mazzucato, Simone Erol, Ayse Balkan, Naci |
| spellingShingle |
Royall, Ben Khalil, Hagir Mazzucato, Simone Erol, Ayse Balkan, Naci Experimental investigation and numerical modelling of photocurrent oscillations in lattice matched Ga1−x In x N y As1−y /GaAs quantum well p-i-n photodiodes |
| author_facet |
Royall, Ben Khalil, Hagir Mazzucato, Simone Erol, Ayse Balkan, Naci |
| author_sort |
Royall, Ben |
| title |
Experimental investigation and numerical modelling of photocurrent oscillations in lattice matched Ga1−x
In
x
N
y
As1−y
/GaAs quantum well p-i-n photodiodes |
| title_short |
Experimental investigation and numerical modelling of photocurrent oscillations in lattice matched Ga1−x
In
x
N
y
As1−y
/GaAs quantum well p-i-n photodiodes |
| title_full |
Experimental investigation and numerical modelling of photocurrent oscillations in lattice matched Ga1−x
In
x
N
y
As1−y
/GaAs quantum well p-i-n photodiodes |
| title_fullStr |
Experimental investigation and numerical modelling of photocurrent oscillations in lattice matched Ga1−x
In
x
N
y
As1−y
/GaAs quantum well p-i-n photodiodes |
| title_full_unstemmed |
Experimental investigation and numerical modelling of photocurrent oscillations in lattice matched Ga1−x
In
x
N
y
As1−y
/GaAs quantum well p-i-n photodiodes |
| title_sort |
experimental investigation and numerical modelling of photocurrent oscillations in lattice matched ga1−x
in
x
n
y
as1−y
/gaas quantum well p-i-n photodiodes |
| description |
Photocurrent oscillations, observed at low temperatures in lattice-matched Ga1−x
In
x
N
y
As1−y
/GaAs multiple quantum well (MQW) p-i-n samples, are investigated as a function of applied bias and excitation wavelength and are modelled with the aid of semiconductor simulation software. The oscillations appear only at low temperatures and have the highest amplitude when the optical excitation energy is in resonance with the GaInNAs bandgap. They are explained in terms of electron accumulation and the formation of high-field domains in the GaInNAs QWs as a result of the disparity between the photoexcited electron and hole escape rates from the QWs. The application of the external bias results in the motion of the high-field domain towards the anode where the excess charge dissipates from the well adjacent to anode via tunnelling. |
| publisher |
Springer |
| publishDate |
2014 |
| url |
https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3933184/ |
| _version_ |
1612061329792696320 |