Carrier trapping and escape times in p-i-n GaInNAs MQW structures
We used a semi-classical model to describe carrier capture into and thermionic escape from GaInNAs/GaAs multiple quantum wells (MQWs) situated within the intrinsic region of a GaAs p-i-n junction. The results are used to explain photocurrent oscillations with applied bias observed in these structure...
| Main Authors: | , |
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| Format: | Online |
| Language: | English |
| Published: |
Springer
2014
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3902426/ |