GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 μm operation
Hot electron light emission and lasing in semiconductor heterostructure (Hellish) devices are surface emitters the operation of which is based on the longitudinal injection of electrons and holes in the active region. These devices can be designed to be used as vertical cavity surface emitting laser...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Online |
| Language: | English |
| Published: |
Springer
2011
|
| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211148/ |