Enhanced photoluminescence from porous silicon nanowire arrays
The enhanced room-temperature photoluminescence of porous Si nanowire arrays and its mechanism are investigated. Over 4 orders of magnitude enhancement of light intensity is observed by tuning their nanostructures and surface modification. It is concluded that the localized states related to Si-O bo...
Main Authors: | Zhang, Chunqian, Li, Chuanbo, Liu, Zhi, Zheng, Jun, Xue, Chunlai, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming |
---|---|
Format: | Online |
Language: | English |
Published: |
Springer
2013
|
Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3683345/ |
Similar Items
-
Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance
by: Zhang, Dalin, et al.
Published: (2014) -
High-Columbic-Efficiency Lithium Battery Based on Silicon Particle Materials
by: Zhang, Junying, et al.
Published: (2015) -
Cu2+1O coated polycrystalline Si nanoparticles as anode for lithium-ion battery
by: Zhang, Junying, et al.
Published: (2016) -
Ni ohmic contacts to n-type Ge1−x−ySixSny using phosphorous implant and segregation
by: Suyuan Wang, et al.
Published: (2015-12-01) -
Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature
by: Liu, Zhi, et al.
Published: (2012)