Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature
The authors report single-photon emission from InGaAs quantum dots grown by droplet epitaxy on (100) GaAs substrates using a solid-source molecular beam epitaxy system at elevated substrate temperatures above 400°C without post-growth annealing. High-resolution micro-photoluminescence spectroscopy e...
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pubmed-34945522012-11-13 Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature Benyoucef, Mohamed Zuerbig, Verena Reithmaier, Johann Peter Kroh, Tim Schell, Andreas W Aichele, Thomas Benson, Oliver Nano Express The authors report single-photon emission from InGaAs quantum dots grown by droplet epitaxy on (100) GaAs substrates using a solid-source molecular beam epitaxy system at elevated substrate temperatures above 400°C without post-growth annealing. High-resolution micro-photoluminescence spectroscopy exhibits sharp excitonic emissions with lifetimes ranging from 0.7 to 1.1 ns. The coherence properties of the emitted photons are investigated by measuring the first-order field correlation function. Springer 2012-08-31 /pmc/articles/PMC3494552/ /pubmed/22937992 http://dx.doi.org/10.1186/1556-276X-7-493 Text en Copyright ©2012 Benyoucef et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
repository_type |
Open Access Journal |
institution_category |
Foreign Institution |
institution |
US National Center for Biotechnology Information |
building |
NCBI PubMed |
collection |
Online Access |
language |
English |
format |
Online |
author |
Benyoucef, Mohamed Zuerbig, Verena Reithmaier, Johann Peter Kroh, Tim Schell, Andreas W Aichele, Thomas Benson, Oliver |
spellingShingle |
Benyoucef, Mohamed Zuerbig, Verena Reithmaier, Johann Peter Kroh, Tim Schell, Andreas W Aichele, Thomas Benson, Oliver Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature |
author_facet |
Benyoucef, Mohamed Zuerbig, Verena Reithmaier, Johann Peter Kroh, Tim Schell, Andreas W Aichele, Thomas Benson, Oliver |
author_sort |
Benyoucef, Mohamed |
title |
Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature |
title_short |
Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature |
title_full |
Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature |
title_fullStr |
Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature |
title_full_unstemmed |
Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature |
title_sort |
single-photon emission from single ingaas/gaas quantum dots grown by droplet epitaxy at high substrate temperature |
description |
The authors report single-photon emission from InGaAs quantum dots grown by droplet epitaxy on (100) GaAs substrates using a solid-source molecular beam epitaxy system at elevated substrate temperatures above 400°C without post-growth annealing. High-resolution micro-photoluminescence spectroscopy exhibits sharp excitonic emissions with lifetimes ranging from 0.7 to 1.1 ns. The coherence properties of the emitted photons are investigated by measuring the first-order field correlation function. |
publisher |
Springer |
publishDate |
2012 |
url |
https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3494552/ |
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1611923163260649472 |