Structural evolution of GeMn/Ge superlattices grown by molecular beam epitaxy under different growth conditions

GeMn/Ge epitaxial 'superlattices' grown by molecular beam epitaxy with different growth conditions have been systematically investigated by transmission electron microscopy. It is revealed that periodic arrays of GeMn nanodots can be formed on Ge and GaAs substrates at low temperature (app...

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Main Authors:	Wang, Ya, Liao, Zhiming, Xu, Hongyi, Xiu, Faxian, Kou, Xufeng, Wang, Yong, Wang, Kang L, Drennan, John, Zou, Jin
Format:	Online
Language:	English
Published:	Springer 2011
Online Access:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3285769/

id	pubmed-3285769
recordtype	oai_dc
spelling	pubmed-32857692012-02-24 Structural evolution of GeMn/Ge superlattices grown by molecular beam epitaxy under different growth conditions Wang, Ya Liao, Zhiming Xu, Hongyi Xiu, Faxian Kou, Xufeng Wang, Yong Wang, Kang L Drennan, John Zou, Jin Nano Express GeMn/Ge epitaxial 'superlattices' grown by molecular beam epitaxy with different growth conditions have been systematically investigated by transmission electron microscopy. It is revealed that periodic arrays of GeMn nanodots can be formed on Ge and GaAs substrates at low temperature (approximately 70°C) due to the matched lattice constants of Ge (5.656 Å) and GaAs (5.653 Å), while a periodic Ge/GeMn superlattice grown on Si showed disordered GeMn nanodots with a large amount of stacking faults, which can be explained by the fact that Ge and Si have a large lattice mismatch. Moreover, by varying growth conditions, the GeMn/Ge superlattices can be manipulated from having disordered GeMn nanodots to ordered coherent nanodots and then to ordered nanocolumns. Springer 2011-12-12 /pmc/articles/PMC3285769/ /pubmed/22151995 http://dx.doi.org/10.1186/1556-276X-6-624 Text en Copyright ©2011 Wang et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
repository_type	Open Access Journal
institution_category	Foreign Institution
institution	US National Center for Biotechnology Information
building	NCBI PubMed
collection	Online Access
language	English
format	Online
author	Wang, Ya Liao, Zhiming Xu, Hongyi Xiu, Faxian Kou, Xufeng Wang, Yong Wang, Kang L Drennan, John Zou, Jin
spellingShingle	Wang, Ya Liao, Zhiming Xu, Hongyi Xiu, Faxian Kou, Xufeng Wang, Yong Wang, Kang L Drennan, John Zou, Jin Structural evolution of GeMn/Ge superlattices grown by molecular beam epitaxy under different growth conditions
author_facet	Wang, Ya Liao, Zhiming Xu, Hongyi Xiu, Faxian Kou, Xufeng Wang, Yong Wang, Kang L Drennan, John Zou, Jin
author_sort	Wang, Ya
title	Structural evolution of GeMn/Ge superlattices grown by molecular beam epitaxy under different growth conditions
title_short	Structural evolution of GeMn/Ge superlattices grown by molecular beam epitaxy under different growth conditions
title_full	Structural evolution of GeMn/Ge superlattices grown by molecular beam epitaxy under different growth conditions
title_fullStr	Structural evolution of GeMn/Ge superlattices grown by molecular beam epitaxy under different growth conditions
title_full_unstemmed	Structural evolution of GeMn/Ge superlattices grown by molecular beam epitaxy under different growth conditions
title_sort	structural evolution of gemn/ge superlattices grown by molecular beam epitaxy under different growth conditions
description	GeMn/Ge epitaxial 'superlattices' grown by molecular beam epitaxy with different growth conditions have been systematically investigated by transmission electron microscopy. It is revealed that periodic arrays of GeMn nanodots can be formed on Ge and GaAs substrates at low temperature (approximately 70°C) due to the matched lattice constants of Ge (5.656 Å) and GaAs (5.653 Å), while a periodic Ge/GeMn superlattice grown on Si showed disordered GeMn nanodots with a large amount of stacking faults, which can be explained by the fact that Ge and Si have a large lattice mismatch. Moreover, by varying growth conditions, the GeMn/Ge superlattices can be manipulated from having disordered GeMn nanodots to ordered coherent nanodots and then to ordered nanocolumns.
publisher	Springer
publishDate	2011
url	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3285769/
_version_	1611508141335248896

Structural evolution of GeMn/Ge superlattices grown by molecular beam epitaxy under different growth conditions

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