Conductance of Graphene Nanoribbon Junctions and the Tight Binding Model
Planar carbon-based electronic devices, including metal/semiconductor junctions, transistors and interconnects, can now be formed from patterned sheets of graphene. Most simulations of charge transport within graphene-based electronic devices assume an energy band structure based on a nearest-neighb...
Main Authors: | , |
---|---|
Format: | Online |
Language: | English |
Published: |
Springer
2010
|
Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212209/ |
id |
pubmed-3212209 |
---|---|
recordtype |
oai_dc |
spelling |
pubmed-32122092011-11-09 Conductance of Graphene Nanoribbon Junctions and the Tight Binding Model Wu, Y Childs, PA Nano Express Planar carbon-based electronic devices, including metal/semiconductor junctions, transistors and interconnects, can now be formed from patterned sheets of graphene. Most simulations of charge transport within graphene-based electronic devices assume an energy band structure based on a nearest-neighbour tight binding analysis. In this paper, the energy band structure and conductance of graphene nanoribbons and metal/semiconductor junctions are obtained using a third nearest-neighbour tight binding analysis in conjunction with an efficient nonequilibrium Green's function formalism. We find significant differences in both the energy band structure and conductance obtained with the two approximations. Springer 2010-10-07 /pmc/articles/PMC3212209/ /pubmed/27502683 http://dx.doi.org/10.1007/s11671-010-9791-y Text en Copyright ©2010 Wu and Childs. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
repository_type |
Open Access Journal |
institution_category |
Foreign Institution |
institution |
US National Center for Biotechnology Information |
building |
NCBI PubMed |
collection |
Online Access |
language |
English |
format |
Online |
author |
Wu, Y Childs, PA |
spellingShingle |
Wu, Y Childs, PA Conductance of Graphene Nanoribbon Junctions and the Tight Binding Model |
author_facet |
Wu, Y Childs, PA |
author_sort |
Wu, Y |
title |
Conductance of Graphene Nanoribbon Junctions and the Tight Binding Model |
title_short |
Conductance of Graphene Nanoribbon Junctions and the Tight Binding Model |
title_full |
Conductance of Graphene Nanoribbon Junctions and the Tight Binding Model |
title_fullStr |
Conductance of Graphene Nanoribbon Junctions and the Tight Binding Model |
title_full_unstemmed |
Conductance of Graphene Nanoribbon Junctions and the Tight Binding Model |
title_sort |
conductance of graphene nanoribbon junctions and the tight binding model |
description |
Planar carbon-based electronic devices, including metal/semiconductor junctions, transistors and interconnects, can now be formed from patterned sheets of graphene. Most simulations of charge transport within graphene-based electronic devices assume an energy band structure based on a nearest-neighbour tight binding analysis. In this paper, the energy band structure and conductance of graphene nanoribbons and metal/semiconductor junctions are obtained using a third nearest-neighbour tight binding analysis in conjunction with an efficient nonequilibrium Green's function formalism. We find significant differences in both the energy band structure and conductance obtained with the two approximations. |
publisher |
Springer |
publishDate |
2010 |
url |
https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212209/ |
_version_ |
1611486424896372736 |