Conductance of Graphene Nanoribbon Junctions and the Tight Binding Model
Planar carbon-based electronic devices, including metal/semiconductor junctions, transistors and interconnects, can now be formed from patterned sheets of graphene. Most simulations of charge transport within graphene-based electronic devices assume an energy band structure based on a nearest-neighb...
| Main Authors: | , |
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| Format: | Online |
| Language: | English |
| Published: |
Springer
2010
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212209/ |
| Summary: | Planar carbon-based electronic devices, including metal/semiconductor junctions, transistors and interconnects, can now be formed from patterned sheets of graphene. Most simulations of charge transport within graphene-based electronic devices assume an energy band structure based on a nearest-neighbour tight binding analysis. In this paper, the energy band structure and conductance of graphene nanoribbons and metal/semiconductor junctions are obtained using a third nearest-neighbour tight binding analysis in conjunction with an efficient nonequilibrium Green's function formalism. We find significant differences in both the energy band structure and conductance obtained with the two approximations. |
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