Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization
The effects of near-surface processing on the properties of AlGaN/GaN heterostructures were studied, combining conventional electrical characterization on high-electron mobility transistors (HEMTs), with advanced characterization techniques with nanometer scale resolution, i.e., transmission electro...
| Main Authors: | , , , , |
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| Format: | Online |
| Language: | English |
| Published: |
Springer
2011
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211179/ |