Nitrate ion detection using AlGaN/GaN heterostructure-based devices without a reference electrode
AlGaN/GaN heterostructure-based devices can be engineered through heterostructure design to have a high transconductance near zero gate–drain voltage, potentially enabling high sensitivity, reference electrode free, ion sensing. As a proof of concept, these devices were coated with a PVC-based membr...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Journal Article |
| Published: |
Elsevier SA
2013
|
| Online Access: | http://hdl.handle.net/20.500.11937/24180 |