Spin effects in InAs self-assembled quantum dots
We have studied the polarized resolved photoluminescence in an n-type resonant tunneling diode (RTD) of GaAs/AlGaAs which incorporates a layer of InAs self-assembled quantum dots (QDs) in the center of a GaAs quantum well (QW). We have observed that the QD circular polarization degree depends on app...
| Main Authors: | , , , , |
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| Format: | Online |
| Language: | English |
| Published: |
Springer
2011
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211160/ |