γ-rays irradiation effects on dielectric properties of Ti/Au/GaAsN Schottky diodes with 1.2%N
Dielectric properties of As grown and irradiated Ti /Au/GaAsN Schottky diodes with 1.2%N are investigated using capacitance/conductance-voltage measurements in 90–290 K temperature range and 50–2000 kHz frequency range. Extracted parameters are interface state density, series resistance, dielectric...
| Main Author: | |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2018
|
| Online Access: | http://eprints.nottingham.ac.uk/49647/ http://eprints.nottingham.ac.uk/49647/ http://eprints.nottingham.ac.uk/49647/ http://eprints.nottingham.ac.uk/49647/8/g-rays%20irradiation%20effects%20on%20%20dielectric%20properties%20of%20Ti_Au_GaAsN%20Schottky%20diodes%20with%201_2%25N.pdf |