High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire

High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire

The discovery of graphene and its remarkable electronic properties has provided scientists with a revolutionary material system for electronics and optoelectronics. Here, the authors investigate molecular beam epitaxy (MBE) as a growth method for graphene layers. The standard dual chamber GENxplor h...

Full description

Bibliographic Details
Main Authors: Cheng, Tin S., Davies, Andrew, Summerfield, Alex, Cho, YongJin, Cebula, Izabela, Hill, Richard J.A., Mellor, Christopher J., Khlobystov, Andrei N., Taniguchi, Takashi, Watanabe, Kenji, Beton, Peter H., Foxon, C. Thomas, Eaves, Laurence, Novikov, Sergei V.
Format: Article
Language:English
Published: AIP 2016
Online Access:http://eprints.nottingham.ac.uk/42169/
http://eprints.nottingham.ac.uk/42169/
http://eprints.nottingham.ac.uk/42169/
http://eprints.nottingham.ac.uk/42169/1/JVST_B_34_2016_02L101.pdf

Internet

http://eprints.nottingham.ac.uk/42169/
http://eprints.nottingham.ac.uk/42169/
http://eprints.nottingham.ac.uk/42169/
http://eprints.nottingham.ac.uk/42169/1/JVST_B_34_2016_02L101.pdf

Similar Items