High-temperature molecular beam epitaxy of hexagonal boron nitride layers
The growth and properties of hexagonal boron nitride (hBN) have recently attracted much attention due to applications in graphene-based monolayer thick 2D-structures and at the same time as a wide band gap material for deep-ultraviolet device (DUV) applications. We present our results on the high-te...
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing
2018
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| Online Access: | http://eprints.nottingham.ac.uk/49392/ http://eprints.nottingham.ac.uk/49392/ http://eprints.nottingham.ac.uk/49392/ http://eprints.nottingham.ac.uk/49392/8/1.5011280.pdf |