Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes
We have investigated the polarization-resolved electroluminescence (EL) of a p–i–n GaAs/AlAs/InGaAs resonant tunneling diode (RTD) containing a GaMnAs (x = 5%) spin injector under high magnetic fields. We demonstrate that under hole resonant tunneling condition, the GaMnAs contact acts as an effic...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2016
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| Online Access: | http://eprints.nottingham.ac.uk/39519/ http://eprints.nottingham.ac.uk/39519/ http://eprints.nottingham.ac.uk/39519/ http://eprints.nottingham.ac.uk/39519/9/J.PhysD_GaMnAs%20RTD_Gobato-revised%20%28002%29.pdf |